2SC1969 Final RF Power Output

 2SC1969 Silicon NPN Transistor
Final RF Power Output for 27 MHz CB Radios

Unfortunately this RF Final component to repair CB Radios has become important to me.

This is because in a moment of memory lapse I did what I always canned good buddys for, tuning and transmitting with no antenna or dummy load attached!! ON AM!

Not a good idea although the specs on these transistors seem to indicate that they will withstand this foolish practise!

But apparently not.

Anyway I have ordered some from ebay sellers to replace my faulty ones in a few radios I purchased in that condition anyway as well as my own mistake.

2 orig Mitsubishi 2sc1969 for $10 AUD from Hong Kong and 4 HG Semiconductors 2sc1969 from Bangcock Thailand for $18 AUD. Who knows wether they are any good or not but at the price I will take the chance and see how they go in comparison to each brand.

Dont even know if the Mitsubishi ones are genuine or not. Go here for more on replacing my faulty 2sc1969 with these.

The 2SC1969 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF band mobile radio applications including CB Radios on 27 MHz.

CB Radio RF Transistors
B C E

 

Features:

  • High Power Gain:  Gpe >/= 12dB (VCC =
    12V, PO= 16W, f = 27MHz)
  • Ability to Withstand Infinite VSWR Load when Operated
    at:
    VCC = 16V, PO
    = 20W, f = 27MHz

 

Application:

  • 10 to 14 Watt Output Power Class AB Amplifier Applications in HF
    Band

Absolute Maximum Ratings: (TC = +25°C unless
otherwise specified)

Collector-Emitter Voltage (RBE = Infinity),
VCEO
25V
Collector-Base Voltage, VCBO 60V
Emitter-Base Voltage, VEBO 5V
Collector Current, IC 6A
Collector Power Dissipation (TA = +25°C),
PD
1.7W
Collector Power Dissipation (TC = +50°C),
PD
20W
Operating Junction Temperature, TJ +150°C
Storage Temperature Range, Tstg -55° to +150°C
Thermal Resistance, Junction-to-Case,
RthJC
6.25°C/W
Thermal Resistance, Junction-to-Ambient,
RthJA
73.5°C/W

Electrical Characteristics: (TC = +25°C unless otherwise
specified)

Parameter Symbol Test Conditions Min Typ Max Unit
Collector-Base Breakdown Voltage V(BR)CBO IC = 1mA, IE =
0
60 V
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10mA, RBE =
Infinity
25 V
Emitter-Base Breakdown Voltage V(BR)EBO IE = 5mA, IC =
0
5 V
Collector Cutoff Current ICBO VCB = 30V IE =
0
100 µA
Emitter Cutoff Current IEBO VEB = 4V, IC =
0
100 µA
DC Forward Current Gain hFE VCE = 12V, IC = 10mA,
Note 1
10 50 180  
Power Output PO VCC = 12V,
Pin = 1W, f = 27MHz
16 18 W
Collector Efficiency   60 70 %

Note 1. Pulse test: Pulse Width = 150µs, Duty Cycle = 5%.

2sc1969 Collector Dissipation CB Radio RF Final
 

 

2sc1969 CB Radio RF Final Output vs Supply Voltage
2sc1969 CB Radio RF Final output current vs input power

 

2SC1969 by HG   Semiconductors


HG RF POWER TRANSISTOR
ROHS Compliance,Silicon NPN POWER TRANSISTOR

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