2SC1969 Silicon NPN Transistor
Final RF Power Output for 27 MHz CB Radios
Unfortunately this RF Final component to repair CB Radios has become important to me.
This is because in a moment of memory lapse I did what I always canned good buddys for, tuning and transmitting with no antenna or dummy load attached!! ON AM!
Not a good idea although the specs on these transistors seem to indicate that they will withstand this foolish practise!
But apparently not.
Anyway I have ordered some from ebay sellers to replace my faulty ones in a few radios I purchased in that condition anyway as well as my own mistake.
2 orig Mitsubishi 2sc1969 for $10 AUD from Hong Kong and 4 HG Semiconductors 2sc1969 from Bangcock Thailand for $18 AUD. Who knows wether they are any good or not but at the price I will take the chance and see how they go in comparison to each brand.
Dont even know if the Mitsubishi ones are genuine or not. Go here for more on replacing my faulty 2sc1969 with these.
The 2SC1969 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF band mobile radio applications including CB Radios on 27 MHz. |
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Features:
- High Power Gain: Gpe >/= 12dB (VCC =
12V, PO= 16W, f = 27MHz) - Ability to Withstand Infinite VSWR Load when Operated
at:
VCC = 16V, PO
= 20W, f = 27MHz
Application:
- 10 to 14 Watt Output Power Class AB Amplifier Applications in HF
Band
Absolute Maximum Ratings: (TC = +25°C unless
otherwise specified)
| Collector-Emitter Voltage (RBE = Infinity), VCEO |
25V |
| Collector-Base Voltage, VCBO | 60V |
| Emitter-Base Voltage, VEBO | 5V |
| Collector Current, IC | 6A |
| Collector Power Dissipation (TA = +25°C), PD |
1.7W |
| Collector Power Dissipation (TC = +50°C), PD |
20W |
| Operating Junction Temperature, TJ | +150°C |
| Storage Temperature Range, Tstg | -55° to +150°C |
| Thermal Resistance, Junction-to-Case, RthJC |
6.25°C/W |
| Thermal Resistance, Junction-to-Ambient, RthJA |
73.5°C/W |
Electrical Characteristics: (TC = +25°C unless otherwise
specified)
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Collector-Base Breakdown Voltage | V(BR)CBO | IC = 1mA, IE = 0 |
60 | – | – | V |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | IC = 10mA, RBE = Infinity |
25 | – | – | V |
| Emitter-Base Breakdown Voltage | V(BR)EBO | IE = 5mA, IC = 0 |
5 | – | – | V |
| Collector Cutoff Current | ICBO | VCB = 30V IE = 0 |
– | – | 100 | µA |
| Emitter Cutoff Current | IEBO | VEB = 4V, IC = 0 |
– | – | 100 | µA |
| DC Forward Current Gain | hFE | VCE = 12V, IC = 10mA, Note 1 |
10 | 50 | 180 | |
| Power Output | PO | VCC = 12V, Pin = 1W, f = 27MHz |
16 | 18 | – | W |
| Collector Efficiency | 60 | 70 | – | % |
Note 1. Pulse test: Pulse Width = 150µs, Duty Cycle = 5%.
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HG RF POWER TRANSISTOR
ROHS Compliance,Silicon NPN POWER TRANSISTOR